Raja Ramanna Centre for Advanced Technology - India
AUTHOR PROFILE
GOOGLE SCHOLAR
EARLY ACADEMIC PURSUITS š
Abhishek Chatterjee's academic journey began with a Bachelor of Science (B.Sc.) in Physics, Chemistry, and Mathematics from the University of North Bengal, where he distinguished himself by securing a University Medal for his academic excellence. He furthered his studies with a Master of Science (M.Sc.) in Physics, specializing in Condensed Matter Physics at Jadavpur University. His passion for semiconductor physics led him to pursue a Master of Technology (M.Tech.) at Homi Bhabha National Institute, Mumbai, focusing on the electrical characterization of nitride epitaxial layers. Abhishek culminated his academic training with a Ph.D. in Physics, with a thesis on electronic transport studies on GaN epitaxial layers for fabricating radiation-hard ultraviolet photodetectors.
PROFESSIONAL ENDEAVORS š¢
Since 2012, Abhishek has been serving as a Scientific Officer at the Raja Ramanna Centre for Advanced Technology (RRCAT) in Indore, India. His role involves extensive research and development in the field of semiconductor materials and devices. Abhishek has made significant contributions to the growth and characterization of III-V and nitride semiconductors, utilizing advanced techniques such as Metal-Organic Chemical Vapor Phase Deposition (MOCVD) and Molecular Beam Epitaxy (MBE). His expertise extends to various fabrication processes, including photolithography, etching, and thin-film deposition, highlighting his comprehensive skills in semiconductor device development.
CONTRIBUTIONS AND RESEARCH FOCUS š¬
Abhishek's research is deeply rooted in the physics of III-V, III-N, and ultra-wide band gap semiconductors. His work primarily revolves around the epitaxial growth of these materials, exploring their optoelectronic properties, and investigating the interfaces of metal/semiconductor and Semiconductor Materials and Devices metal/oxide/semiconductor junctions. He has developed optoelectronic and photonic devices with applications in advanced technology. His doctoral research on GaN epitaxial layers has provided valuable insights into electronic transport mechanisms and radiation hardness, which are crucial for developing high-performance ultraviolet photodetectors.
ACCOLADES AND RECOGNITION š
Abhishek's contributions have been recognized with several awards and honors. Notably, he received the Best Thesis Award at the 30th DAE-BRNS National Laser Symposium, organized by the Indian Laser Association and BARC. He has also been acknowledged as an Outstanding Reviewer by prestigious international journals, including Materials Research Express and Semiconductor Science and Technology. His work on Semiconductor Materials and Devices dislocation-limited electronic transport in GaN templates was featured in Semiconductor Today Magazine, underscoring his impact in the field of semiconductor research.
IMPACT AND INFLUENCE š
Abhishek's research has significantly impacted the field of optoelectronics and semiconductor physics. His studies on wide band gap semiconductors have advanced our understanding of material properties and device performance, paving the way for new applications in Semiconductor Materials and Devices radiation-hard electronics and photodetectors. His expertise in growth techniques and device fabrication has been instrumental in pushing the boundaries of semiconductor technology, contributing to the development of cutting-edge technologies.
LEGACY AND FUTURE CONTRIBUTIONS š®
Abhishek Chatterjee's legacy in the field of semiconductor research is marked by his pioneering work on GaN epitaxial layers and their applications in optoelectronic devices. As a life member of the Indian Laser Association, he continues to be an active contributor to the scientific community. Abhishek's future work promises to delve deeper into the complexities of semiconductor physics, exploring new materials and device architectures that will shape the next generation of optoelectronic technologies. His commitment to excellence and innovation ensures that his contributions will have a lasting impact on the field.
NOTABLEĀ PUBLICATIONS
Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride Ā 2015(25)
Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal 2020(15)
Effect of 60Co Ī³-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors 2018(14)
Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates:Ā Ā 2015(13)
Role of ZrO2Ā Passivation Layer Thickness in the Fabrication of HighāResponsivity GaN Ultraviolet Photodetectors 2019(12)