Warsaw Unversity of Technology | Poland
Bogdan Majkusiak is a distinguished Polish scientist and Professor at the Warsaw University of Technology, renowned for his influential contributions to electronics, semiconductor physics, and microelectronics. He progressed through successive academic degrees at the Faculty of Electronics and rose from technician to a leading academic figure, shaping the field through extensive research, teaching, and leadership. His career includes significant service as Associate Dean, Senior Associate Dean, Rector’s Representative for English Language Studies, and long-standing membership in faculty and scientific councils. He has played a central role in international scientific events, serving on steering and technical program committees for major conferences such as INFOS, IWCE, and Diagnostic and Yield, as well as acting as General Chair of INFOS in Krakow. His expertise has been recognized through appointments as an expert for national research and accreditation bodies. Majkusiak’s scholarly output includes impactful book chapters on multigate MOS physics and nanoscale CMOS modeling, reflecting his deep contributions to device simulation and semiconductor technology. He is widely cited in the global research community, with an h-index of, citation count of, and indexed documents, underscoring his enduring influence on microelectronics research and semiconductor device engineering.
Profile: Scopus | Orcid
Featured Publications
Jasiński, J., Mazurak, A., & Majkusiak, B. (2016). Effect of interface traps parameters on admittance characteristics of the MIS (metal–insulator–semiconductor) tunnel structures. Proceedings of SPIE – The International Society for Optical Engineering.
Mazurak, A., Jasiński, J., & Majkusiak, B. (2016). Effect of nanocrystal geometric location on tunnel currents and small-signal admittance of MIS structures. Physica Status Solidi (C): Current Topics in Solid State Physics.
Tanous, D., Mazurak, A., & Majkusiak, B. (2016). Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures. Proceedings of SPIE – The International Society for Optical Engineering.
Wiśniewski, P., & Majkusiak, B. (2016). Modeling of tunnel field effect transistor: The impact of construction parameters. Proceedings of SPIE – The International Society for Optical Engineering.
Wiśniewski, P., Mroczyński, R., & Majkusiak, B. (2016). Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures. Proceedings of SPIE – The International Society for Optical Engineering.